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| inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn darlington power transistor DT430 description collector-emitter breakdown voltage- : v (br)ceo = 300v(min) high dc current gain : h fe = 2000(min.)@ i c = 4a low collector saturation voltage : v ce(sat) = 3.0v(max.)@ i c = 6a applications switching for dynamotor excitation general purpose power amplifier absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 400 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current-continuous 10 a i b base current-continuous 1 a p c collector power dissipation @ t c =25 100 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn darlington power transistor DT430 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 300 v v (br)cbo collector-base breakdown voltage i c =1ma ;i e =0 400 v v (br)ebo emitter-base breakdown voltage i e =50ma ;i c =0 7 v v ce (sat)-1 collector-emitter satu ration voltage i c =1a; i b =10ma 1.5 v v ce (sat)-2 collector-emitter satu ration voltage i c =6a; i b =50ma 3.0 v i cbo collector cutoff current v cb = 400v; i e = 0 100 a i ebo emitter cutoff current v eb = 7v; i c = 0 100 a h fe-1 dc current gain i c = 4a; v ce = 4v 2000 h fe-2 dc current gain i c = 5ma; v ce = 4v 300 |
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